STP5NK65Z

N-channel Power MOSFET

STMicroelectronics

STP5NK65Z Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltag

STP5NK65Z General Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements .

STP5NK65Z Datasheet (226.05 KB)

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STP5NK65Z

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STMicroelectronics ↗

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226.05 KB

Description:

N-channel power mosfet.
N-CHANNEL 650V - 1.5Ω - 5A TO-220 Zener-Protected SuperMESH™Power MOSFET TYPE STP5NK65Z s STP5NK65Z VDSS 650 V RDS(on) < 1.8 Ω ID 5A Pw 85 W TYP.

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STP5NK65Z N-channel Power MOSFET STMicroelectronics

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STP5NK65Z Features

STP5NK65Z General Description

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