STP80N900K6 Datasheet (STMicroelectronics)

STP80N900K6, N-Channel Power MOSFET

S(3) AM01476v1_tab This very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology.

The result is the best-in-class on-resistance per area and gate charge for applications requiring superio

STP80N900K6 Features

* TAB Order code VDS RDS(on) max. ID STP80N900K6 800 V 900 mΩ 6A TO-220 1 23 D(2, TAB)

* Worldwide best RDS(on) x area

* Worldwide best FOM (figure of merit)

* Ultra low gate charge

* 100% avalanche tested

* Zener-protected Applications