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STPSC10TH13TI Dual 650V power Schottky silicon carbide diode

STPSC10TH13TI Description

STPSC10TH13TI Dual 650 V power Schottky silicon carbide diode in series    ,QVXODWHG72$%  .
The SiC diode is an ultrahigh performance power Schottky diode.

STPSC10TH13TI Features

* No or negligible reverse recovery
* Switching behavior independent of temperature
* Suited for specific bridge-less topologies
* High forward surge capability
* Insulated package:
* Capacitance: 7 pF
* Insulated voltage: 2500 V rms Datasheet - production data

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Dual 650V power Schottky silicon carbide diode STMicroelectronics
STMicroelectronics STPSC10TH13TI-like datasheet