STTH4R02-Y Datasheet, Diode, STMicroelectronics

STTH4R02-Y Features

• Diode
• Very low conduction losses
• Negligible switching losses
• Low forward and reverse recovery times
• High junction temperature
• PPAP capable

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Part number:

STTH4R02-Y

Manufacturer:

STMicroelectronics ↗

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444.70kb

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📄 Datasheet

Description:

Automotive ultrafast recovery diode. This device uses ST's new 200 V planar Pt doping technology, and it is especially suited for switching mode base drive and transistor

STTH4R02-Y Application

• Applications Table 1: Device summary Symbol Value IF(AV) VRRM Tj (max.) VF (typ.) trr (typ.) 4A 200 V 175 °C 0.76 V 16 ns April 2016 DocID17

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STTH4R02-Y

STMicroelectronics

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