* Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. ID 7A R DS(ON) (m Ω) Max 20 @ VGS=4.5V 28 @ VGS=2.5V T S S OP D 1/D 2 S1 S1 G1 1 2 3 4 8 7 6 5 D 1/D 2 S2 S2 G2 D1 D2 G1 G2 (T OP V IE W) S1 S2 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unl
STG8810
SamHop Microelectronics
220.80 KB
Dual n-channel enhancement mode field effect transistor.
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Green Product
STG8810
Ver 1.0
S a mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
PRODUCT.
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