Part number:
STG8810
Manufacturer:
SamHop Microelectronics
File Size:
220.80 KB
Description:
Dual n-channel enhancement mode field effect transistor.
Datasheet Details
STG8810 Features
* Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. ID 7A R DS(ON) (m Ω) Max 20 @ VGS=4.5V 28 @ VGS=2.5V T S S OP D 1/D 2 S1 S1 G1 1 2 3 4 8 7 6 5 D 1/D 2 S2 S2 G2 D1 D2 G1 G2 (T OP V IE W) S1 S2 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unl
Datasheet Details
STG8810
SamHop Microelectronics
220.80 KB
Dual n-channel enhancement mode field effect transistor.
📁 Related Datasheet
STG8810A Dual N-Channel Enhancement Mode Field Effect Transistor (SamHop Microelectronics)
STG8820 Dual N-Channel Enhancement Mode Field Effect Transistor (SamHop Microelectronics)
STG8203 Dual N-Channel Enhancement Mode Field Effect Transistor (SamHop Microelectronics)
STG8205 Dual N-Channel Enhancement Mode Field Effect Transistor (SamHop Microelectronics)
STG8206 Dual N-Channel Enhancement Mode Field Effect Transistor (SamHop Microelectronics)
STG8207 Dual N-Channel Enhancement Mode Field Effect Transistor (SamHop Microelectronics)
STG8209 Dual N-Channel Enhancement Mode Field Effect Transistor (SamHop Microelectronics)
STG8210 Dual N-Channel Enhancement Mode Field Effect Transistor (SamHop Microelectronics)
STG8211 Dual N-Channel Enhancement Mode Field Effect Transistor (SamHop Microelectronics)
STG1 N-channel Power MOSFET (STMicroelectronics)
TAGS
Image Gallery
STG8810 Distributor