* Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD HBM > 2KV. T S S OP D 1/D 2 S1 S1 G1 1 2 3 4 8 7 6 5 D 1/D 2 S2 S2 G2 D1 D2 G1 G2 (T OP V IE W) S1 S2 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG
STG8810A Datasheet (127.88 KB)
STG8810A
SamHop Microelectronics
127.88 KB
Dual n-channel enhancement mode field effect transistor.
Green Product
STG8810A
Ver 1.3
S a mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS ID R .
📁 Related Datasheet
STG8810 Dual N-Channel Enhancement Mode Field Effect Transistor (SamHop Microelectronics)
STG8820 Dual N-Channel Enhancement Mode Field Effect Transistor (SamHop Microelectronics)
STG8203 Dual N-Channel Enhancement Mode Field Effect Transistor (SamHop Microelectronics)
STG8205 Dual N-Channel Enhancement Mode Field Effect Transistor (SamHop Microelectronics)
STG8206 Dual N-Channel Enhancement Mode Field Effect Transistor (SamHop Microelectronics)
STG8207 Dual N-Channel Enhancement Mode Field Effect Transistor (SamHop Microelectronics)
STG8209 Dual N-Channel Enhancement Mode Field Effect Transistor (SamHop Microelectronics)
STG8210 Dual N-Channel Enhancement Mode Field Effect Transistor (SamHop Microelectronics)
STG8211 Dual N-Channel Enhancement Mode Field Effect Transistor (SamHop Microelectronics)
STG1 N-channel Power MOSFET (STMicroelectronics)
TAGS
Image Gallery
