KM732V789 Datasheet (Samsung Semiconductor) - 128Kx32-Bit Synchronous Pipelined Burst SRAM

KM732V789, 128Kx32-Bit Synchronous Pipelined Burst SRAM

The KM732V789 is a 4,194,304-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.

It is organized as 128K words of 32bits and integrates address and control registers, a 2-bit burst address counter and added some new funct

KM732V789 Document Title 128Kx32-Bit Synchronous Pipelined Burst SRAM 128Kx32 Synchronous SRAM Revision History Rev.

No.

1.0 2.0 History Initial draft change tCYC from 8.5ns to 10.0ns.

Modify Rev No.

from 0.0 to 1.0.

Modify DC characteristics( Input Leakage Current test Conditions) form VDD=VSS to VDD to Max.

Add VDDQ Supply voltage( 2.5V ) Remove 119BGA(7x17 Ball Grid Array Package) .

Draft Date May .

19.

1998 June .

02.

1998 Remark Final Final 3.0 June.

08.

1998 Final 4.0 5.0 Dec.

02.

KM732V789 Features

* Synchronous Operation.

* 2 Stage Pipelined operation with 4 Burst.

* On-Chip Address Counter.

* Self-Timed Write Cycle.

* On-Chip Address and Control Registers.

* VDD= 3.3V+0.3V/-0.165V Power Supply.

* VDDQ Supply Voltage 3.3V+0.3V/-0.165V fo