KM732V789 Datasheet - Samsung Semiconductor

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KM732V789 128Kx32-Bit Synchronous Pipelined Burst SRAM

KM732V789 Document Title 128Kx32-Bit Synchronous Pipelined Burst SRAM 128Kx32 Synchronous SRAM Revision History Rev.No.1.0 2.0 History Initial dra.
The KM732V789 is a 4,194,304-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC base.

KM732V789_SamsungSemiconductor.pdf

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Datasheet Details

Part number:

KM732V789

Manufacturer:

Samsung Semiconductor

File Size:

427.06 KB

Description:

128Kx32-Bit Synchronous Pipelined Burst SRAM

Features

* Synchronous Operation.
* 2 Stage Pipelined operation with 4 Burst.
* On-Chip Address Counter.
* Self-Timed Write Cycle.
* On-Chip Address and Control Registers.
* VDD= 3.3V+0.3V/-0.165V Power Supply.
* VDDQ Supply Voltage 3.3V+0.3V/-0.165V fo

Applications

* GW, BW, LBO, ZZ. Write cycles are internally self-timed and synchronous. Full bus-width write is done by GW, and each byte write is performed by the combination of WEx and BW when GW is high. And with CS1 high, ADSP is blocked to control signals. Burst cycle can be initiated with either the address

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KM732V789 128Kx32-Bit Synchronous Pipelined Burst SRAM Samsung Semiconductor

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