Datasheet Details
- Part number
- K7A203600A
- Manufacturer
- Samsung semiconductor
- File Size
- 413.70 KB
- Datasheet
- K7A203600A_Samsungsemiconductor.pdf
- Description
- 64Kx36-Bit Synchronous Pipelined Burst SRAM
K7A203600A Description
PRELIMINARY K7A203600A Document Title 64Kx36-Bit Synchronous Pipelined Burst SRAM 64Kx36 Synchronous SRAM Revision History Rev.No.0.0 0.1 History .
The K7A203600A is a 2,359,296-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC bas.
K7A203600A Features
* Synchronous Operation. 2 Stage Pipelined operation with 4 Burst. On-Chip Address Counter. Self-Timed Write Cycle. On-Chip Address
K7A203600A Applications
* GW, BW, LBO, ZZ. Write cycles are internally self-timed and synchronous. Full bus-width write is done by GW, and each byte write is performed by the combination of WEx and BW when GW is high. And with CS1 high, ADSP is blocked to control signals. Burst cycle can be initiated with either the address
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