Datasheet Details
- Part number
- K9F1G08D0M
- Manufacturer
- Samsung semiconductor
- File Size
- 790.90 KB
- Datasheet
- K9F1G08D0M_Samsungsemiconductor.pdf
- Description
- 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9F1G08D0M Description
www.DataSheet4U.com K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND.
Offered in 128Mx8bit or 64Mx16bit, the K9F1GXXX0M is 1G bit with spare 32M bit capacity.
K9F1G08D0M Features
* Voltage Supply -1.8V device(K9F1GXXQ0M): 1.70V~1.95V - 2.65V device(K9F1GXXD0M) : 2.4~2.9V -3.3V device(K9F1GXXU0M): 2.7 V ~3.6 V
* Organization - Memory Cell Array -X8 device(K9F1G08X0M) : (128M + 4,096K)bit x 8bit -X16 device(K9F1G16X0M) : (64M + 2,048K)bit x 16bit - Data Registe
K9F1G08D0M Applications
* such as solid state file storage and other portable applications requiring non-volatility. 3
www. DataSheet4U. com
K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M
PIN CONFIGURATION (TSOP1)
K9F1GXXX0M-YCB0,PCB0/YIB0,PIB0 X16
N. C N. C N. C N. C N. C N. C R/B RE CE N. C N. C Vcc Vss N. C N. C
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