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2SC3857
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1493) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3857 200 200 6 15 5 150(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
Application : Audio and General Purpose
(Ta=25°C)
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=200V VEB=6V IC=50mA VCE=4V, IC=5A IC=10A, IB=1A VCE=12V, IE=–0.5A VCB=10V, f=1MHz 100max 100max 200min
External Dimensions MT-200
36.4±0.3 24.4±0.2 2-ø3.2±0.1 9 7 21.4±0.3 2.1 6.0±0.2
2SC3857
Unit
µA µA
V
a b
50min∗ 3.0max 20typ 250typ V MHz pF
20.0min
4.0max
2 3 1.05 +0.2 -0.1 5.45±0.1 B C E 5.45±0.1 0.65 +0.2 -0.1 3.0 +0.3 -0.