2SA1896 - PNP Epitaxial Planar Silicon Transistor

Sanyo Semicon Device

Datasheet Details

Adoption of FBET processes.
Large current capacity.
Low collector-to-emitter saturation voltage.
Small size making it easy to provide high-density, small-sized hybrid ICs. Package Dimensions unit:mm 2038A [2SA1896] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol.

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