2SB673 - PNP Transistor
(INCHANGE)
isc Silicon PNP Darlington Power Transistor
2SB673
DESCRIPTION ·High DC Current Gain-
: hFE = 2000(Min)@ IC= -3A ·Collector-Emitter Breakdown Voltag.
2SB673 - Silicon PNP Transistor
(Toshiba)
:
B673
2SB674
2SB675I
SILICON PNP EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON POWER)
HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIV.
2SB673 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SB673
DESCRIPTION ·With TO-220C package ·DARLINGTO.
2SB674 - PNP Transistor
(INCHANGE)
isc Silicon PNP Darlington Power Transistor
2SB674
DESCRIPTION ·High DC Current Gain
: hFE= 2000(Min.) @IC= 3.0A ·Low Saturation Voltage
: VCE(sat)=.
2SB674 - Silicon PNP Transistor
(Toshiba)
:
B673
2SB674
2SB675I
SILICON PNP EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON POWER)
HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIV.
2SB674 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SB674
DESCRIPTION ·With TO-220C package ·DARLINGTO.
2SB675 - PNP Transistor
(INCHANGE)
isc Silicon PNP Darlington Power Transistor
2SB675
DESCRIPTION ·High DC Current Gain
: hFE= 2000(Min.) @IC= 3.0A ·Low Saturation Voltage
: VCE(sat)=.
2SB675 - Silicon PNP Transistor
(Toshiba)
:
B673
2SB674
2SB675I
SILICON PNP EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON POWER)
HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIV.
2SB675 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SB675
DESCRIPTION ·With TO-220C package ·DARLINGTO.
2SB676 - PNP Transistor
(INCHANGE)
isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE = 2000(Min)@ IC= -1A ·Collector-Emitter Breakdown Voltage-
: V(B.