2SC2189 Datasheet, Transistor, SavantIC

PDF File Details

Part number:

2SC2189

Manufacturer:

SavantIC

File Size:

134.22kb

Download:

📄 Datasheet

Description:

Silicon power transistor.

With TO-3 package

Wide area of safe operation APPLICATIONS

For high speed switching and power amplifier ap

2SC2189 Application

• Applications
• For high speed switching and power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified

TAGS

2SC2189

SavantIC

📁 Related Datasheet

2SC2181 - SILICON NPN TRANSISTOR (Toshiba)
SILICON NPN EPITAXIAL PLANAR TYPE VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : P o =40W (Min.) ( f=175MHz, VCC =13.5V, P-j=10W.

2SC2181 - Silicon NPN POWER TRANSISTOR (HGSemi)
HG HG RF POWER TRANSISTOR Semiconductors ROHS Compliance,Silicon NPN POWER TRANSISTOR 2SC2181 Note : Above parameters , ratings , limits and cond.

2SC2188 - Silicon NPN Transistor (Panasonic Semiconductor)
Transistor 2SC2188 Silicon NPN epitaxial planer type For intermediate frequency amplification of TV image Unit: mm 6.9±0.1 1.5 2.5±0.1 1.0 1.0 2.4±0..

2SC2189 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V (Min) ·Wide Area of Safe Operation ·Minimum Lot-t.

2SC2101 - Silicon NPN POWER TRANSISTOR (Toshiba)
SILICON NPN EPITAXIAL PLANAR TYPE VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : P =6W (Min.) ( f=175MHz, VCC=12.5V, Pi=0.5W ) Un.

2SC2101 - Silicon NPN POWER TRANSISTOR (HGSemi)
H G Semiconductors HG RF POWER TRANSISTOR 2SC2101 ROHS Compliance,Silicon NPN POWER TRANSISTOR Note : Above parameters , ratings , limits and condit.

2SC2102 - SILICON NPN TRANSISTOR (Toshiba)
1 SILICON NPN EPITAXIAL PLANAR TYPE VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : Po=15W (Min.) ( f=l 75MHz, Vcc=12.5V, Pi=1.3W).

2SC2103A - SILICON NPN TRANSISTOR (Toshiba)
SILICON NPN EPITAXIAL PLANAR TYPE VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : P =27W (Min.) (f=175MHz, VC C=12.5V, Pi=4.2W ) 1.

2SC2104 - Silicon NPN Transistor (Toshiba)
: SILICON NPN EPITAXIAL PLANAR TYPE UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES . Output Power : P G =3W(Min.) (f=470MHz, V C c=12.6V, Pi=0.4W) ..

2SC2105 - SILICON NPN TRANSISTOR (Toshiba)
SILICON NPN EPITAXIAL PLANAR TYPE UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES . Output Power : P =6W(Min.) (f =4 70MHz, V C c=12.6V, P 1 =1W) . 1.