HFP35N75 Datasheet - SemiHow

HFP35N75 75V N-Channel MOSFET

HFP35N75 Features

*  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 40 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.024 Ω (Typ.) @VGS=10V  100% Avalanche Tes

HFP35N75 Datasheet (702.68 KB)