HFP3N80 Datasheet - SemiHow

HFP3N80 800V N-Channel MOSFET

HFP3N80 Features

*  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 17 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 4.0 Ω (Typ.) @VGS=10V  100% Avalanche Teste

HFP3N80 Datasheet (838.74 KB)