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HFP3N80 800V N-Channel MOSFET

HFP3N80 Description

HFP3N80 Dec 2005 HFP3N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) typ = 4.0 Ω ID = 3.0 A .

HFP3N80 Features

*  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 17 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 4.0 Ω (Typ. ) @VGS=10V  100% Avalanche Teste

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Datasheet Details

Part number
HFP3N80
Manufacturer
SemiHow
File Size
838.74 KB
Datasheet
HFP3N80-SemiHow.pdf
Description
800V N-Channel MOSFET

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800V N-Channel MOSFET SemiHow
SemiHow HFP3N80-like datasheet