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HYB39S16160CT-10, HYB39S16160CT-8 16 MBit Synchronous DRAM

HYB39S16160CT-10 Description

www.DataSheet4U.com 16 MBit Synchronous DRAM HYB 39S16400/800/160CT-8/-10 * High Performance: -8 -10 100 10 7 12 8 Units MHz ns ns ns ns .
Pin Names CLK CKE CS RAS CAS WE A0 - A10 A11 (BS) Clock Input Clock Enable Chip Select Row Address Strobe Column Address Strobe Write Enable Address.

HYB39S16160CT-10 Features

* Bit Synchronous DRAM Operation Definition All of SDRAM operations are defined by states of control signals CS, RAS,

HYB39S16160CT-10 Applications

* Fully Synchronous to Positive Clock Edge
* 0 to 70 °C operating temperature
* Dual Banks controlled by A11 ( Bank Select)
* Programmable CAS Latency: 2, 3
* Programmable Wrap Sequence: Sequential or Interleave
* Programmable Burst Length: 1, 2, 4, 8

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: HYB39S16160CT-10, HYB39S16160CT-8. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
HYB39S16160CT-10, HYB39S16160CT-8
Manufacturer
Siemens Semiconductor
File Size
138.53 KB
Datasheet
HYB39S16160CT-8_SiemensSemiconductor.pdf
Description
16 MBit Synchronous DRAM
Note
This datasheet PDF includes multiple part numbers: HYB39S16160CT-10, HYB39S16160CT-8.
Please refer to the document for exact specifications by model.

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MBit Synchronous DRAM Siemens Semiconductor
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