Description
Silan Microelectronics STS65R360D(F)(S)S2_Datasheet 12A, 650V SUPER JUNCTION MOS POWER TRANSISTOR .
STS65R360D(F)(S)S2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.
Features
* 12A, 650V, RDS(on)(typ. )=0.3Ω@VGS=10V
* New revolutionary high voltage technology
* Ultra low gate charge
* Periodic avalanche rated
* Extreme dv/dt rated
* High peak current capability
* 100% avalanche tested
* Pb-free lead plating
* RoHS compliant
2
1
3 1.Ga