STS65R360D(F)(S)S2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.
It achieves low conduction loss and switching losses.
It leads the design engineers to their power converters with high efficiency, high power density, and superior th
STS65R360FS2 Features
* 12A, 650V, RDS(on)(typ.)=0.3Ω@VGS=10V
* New revolutionary high voltage technology
* Ultra low gate charge
* Periodic avalanche rated
* Extreme dv/dt rated
* High peak current capability
* 100% avalanche tested
* Pb-free lead plating
* RoHS compliant 2 1 3 1.Ga
STS65R360DS2-SilanMicroelectronics.pdf
Datasheet Details
STS65R360FS2, STS65R360DS2
Silan Microelectronics
555.03 KB
650v super junction mos power transistor.
This datasheet PDF includes multiple part numbers: STS65R360FS2, STS65R360DS2.
Please refer to the document for exact specifications by model.
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