STS65R360DS2 Datasheet, Transistor, Silan Microelectronics

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STS65R360DS2

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Silan Microelectronics

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📄 Datasheet

Description:

650v super junction mos power transistor. STS65R360D(F)(S)S2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

✔ STS65R360DS2 Features

12A, 650V, RDS(on)(typ.)=0.3Ω@VGS=10V
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
High peak c

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STS65R360DS2 650V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics