STS65R580FS2

650V SUPER JUNCTION MOS POWER TRANSISTOR

Silan Microelectronics

STS65R580FS2 Features

* 8A, 650V, RDS(on)(typ.)=0.52@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Periodic avalanche rated

* Extreme dv/dt rated

* High peak current capability

* 100% avalanche tested

* Pb-free lead plating

* RoHS compliant 2 1 3 1 3

STS65R580FS2 General Description

STS65R580D(F)(S)(MJ)S2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superio.

STS65R580FS2 Datasheet (440.32 KB)

STS65R580FS2 Datasheet Preview — Preview of STS65R580FS2 PDF

Datasheet Details

Part number:

STS65R580FS2

Manufacturer:

Silan Microelectronics

File Size:

440.32 KB

Description:

650v super junction mos power transistor.

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STS65R580FS2 650V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics

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STS65R580FS2 Features

STS65R580FS2 General Description

Datasheet Details

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Description:

STS65R580FS2 Distributor