SVGQ109R5NAD, SVGQ109R5NAD-SilanMicroelectronics Datasheet - Silan Microelectronics

SVGQ109R5NAD 100V N-CHANNEL MOSFET

SVGQ109R5NAD is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown.

SVGQ109R5NAD Features

* 94A, 100V, RDS(on)(typ.)=7.2m@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Extreme dv/dt rated

* 100% avalanche tested

* Pb-free lead plating

* RoHS compliant

* Max. junction temperature: Tjmax。=175 ºC KEY PERFORMANCE PARAMETERS Characteristics VD

SVGQ109R5NAD-SilanMicroelectronics_removed.pdf

SVGQ109R5NAD Datasheet Preview — This datasheet PDF includes multiple part numbers: SVGQ109R5NAD, SVGQ109R5NAD-SilanMicroelectronics. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

SVGQ109R5NAD, SVGQ109R5NAD-SilanMicroelectronics

Manufacturer:

Silan Microelectronics

File Size:

410.32 KB

Description:

100v n-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: SVGQ109R5NAD, SVGQ109R5NAD-SilanMicroelectronics.
Please refer to the document for exact specifications by model.

SVGQ109R5NAD Distributor

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SVGQ109R5NAD SVGQ109R5NAD-SilanMicroelectronics 100V N-CHANNEL MOSFET Silan Microelectronics