SVS7N70FD2 Datasheet (Silan Microelectronics) - 700V SUPER JUNCTION MOS POWER TRANSISTOR

SVS7N70FD2, 700V SUPER JUNCTION MOS POWER TRANSISTOR

SVS7N70F(D)(MJ)(S)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

It achieves low conduction loss and switching losses.

It leads the design engineers to their power converters with high efficiency, high power density, and superior

SVS7N70FD2 Features

* 2 1 3 1.Gate 2.Drain 3.Source 1 3 TO-252-2L 1 3 TO-263-2L

* 7A, 700V, RDS(on)(typ.)=0.52@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Periodic avalanche rated

* Extreme dv/dt rated

* High peak current capability 1 23 TO-251J-3L 1 23 TO