SVSP7N60DD2, SVSP7N60FJDD2 Datasheet - Silan Microelectronics

SVSP7N60DD2 600V SUPER JUNCTION MOS POWER TRANSISTOR

2 SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superi.

SVSP7N60DD2 Features

* 1 3 1.Gate 2.Drain 3.Source 12 3 TO-220F-3L

* 7A,600V, RDS(on)(typ.)=0.48@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Enhanced avalanche capability

* Extreme dv/dt rated

* High peak current capability 123 TO-220FJD-3L 13 TO-252-2L ORDER

SVSP7N60FJDD2-SilanMicroelectronics.pdf

SVSP7N60DD2 Datasheet Preview — This datasheet PDF includes multiple part numbers: SVSP7N60DD2, SVSP7N60FJDD2. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

SVSP7N60DD2, SVSP7N60FJDD2

Manufacturer:

Silan Microelectronics

File Size:

347.69 KB

Description:

600v super junction mos power transistor.

Note:

This datasheet PDF includes multiple part numbers: SVSP7N60DD2, SVSP7N60FJDD2.
Please refer to the document for exact specifications by model.

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SVSP7N60DD2 SVSP7N60FJDD2 600V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics

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