SVSP7N60FE2 Datasheet (Silan Microelectronics) - 600V DP MOS POWER TRANSISTOR

SVSP7N60FE2, 600V DP MOS POWER TRANSISTOR

SVSP7N60F(D)E2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology.

It achieves low conduction loss and switching losses.

It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior.

SVSP7N60FE2 Features

* 7A,600V, RDS(on)(typ.)=0.48@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Enhanced avalanche capability

* Extreme dv/dt rated

* High peak current capability NOMENCLATURE 2 1 3 1.Gate 2.Drain 3.Source 123 TO-220F-3L 1 3 TO-252-2L Silan DP