SVSP7N60DE2TR, SVSP7N60FE2 Datasheet - Silan Microelectronics

SVSP7N60DE2TR 600V DP MOS POWER TRANSISTOR

SVSP7N60F(D)E2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. .

SVSP7N60DE2TR Features

* 7A,600V, RDS(on)(typ.)=0.48@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Enhanced avalanche capability

* Extreme dv/dt rated

* High peak current capability NOMENCLATURE 2 1 3 1.Gate 2.Drain 3.Source 123 TO-220F-3L 1 3 TO-252-2L Silan DP

SVSP7N60FE2-SilanMicroelectronics.pdf

SVSP7N60DE2TR Datasheet Preview — This datasheet PDF includes multiple part numbers: SVSP7N60DE2TR, SVSP7N60FE2. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

SVSP7N60DE2TR, SVSP7N60FE2

Manufacturer:

Silan Microelectronics

File Size:

328.87 KB

Description:

600v dp mos power transistor.

Note:

This datasheet PDF includes multiple part numbers: SVSP7N60DE2TR, SVSP7N60FE2.
Please refer to the document for exact specifications by model.

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SVSP7N60DE2TR SVSP7N60FE2 600V MOS POWER TRANSISTOR Silan Microelectronics

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