SVSP7N70FJDD2, SVSP7N70FD2 Datasheet - Silan Microelectronics

SVSP7N70FJDD2 700V DP MOS POWER TRANSISTOR

2 SVSP7N70F(D)(S)(FJD)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior therma.

SVSP7N70FJDD2 Features

* 7A, 700V, RDS(on)(typ.)=0.52@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Periodic avalanche rated

* Extreme dv/dt rated

* High peak current capability NOMENCLATURE 1 3 1.Gate 2.Drain 3.Source 1 3 TO-252-2L 1 2 3 TO-220FJD-3L 1 3 TO-263

SVSP7N70FD2-SilanMicroelectronics.pdf

SVSP7N70FJDD2 Datasheet Preview — This datasheet PDF includes multiple part numbers: SVSP7N70FJDD2, SVSP7N70FD2. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

SVSP7N70FJDD2, SVSP7N70FD2

Manufacturer:

Silan Microelectronics

File Size:

398.90 KB

Description:

700v dp mos power transistor.

Note:

This datasheet PDF includes multiple part numbers: SVSP7N70FJDD2, SVSP7N70FD2.
Please refer to the document for exact specifications by model.

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SVSP7N70FJDD2 SVSP7N70FD2 700V MOS POWER TRANSISTOR Silan Microelectronics

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