SVSP7N70FJDD2

700V DP MOS POWER TRANSISTOR

Silan Microelectronics

SVSP7N70FJDD2 Features

* 7A, 700V, RDS(on)(typ.)=0.52@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Periodic avalanche rated

* Extreme dv/dt rated

* High peak current capability NOMENCLATURE 1 3 1.Gate 2.Drain 3.Source 1 3 TO-252-2L 1 2 3 TO-220FJD-3L 1 3 TO-263

SVSP7N70FJDD2 General Description

2 SVSP7N70F(D)(S)(FJD)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior therma.

SVSP7N70FJDD2 Datasheet (398.90 KB)

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Datasheet Details

Part number:

SVSP7N70FJDD2

Manufacturer:

Silan Microelectronics

File Size:

398.90 KB

Description:

700v dp mos power transistor.

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SVSP7N70FJDD2 700V MOS POWER TRANSISTOR Silan Microelectronics

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SVSP7N70FJDD2 Features

SVSP7N70FJDD2 General Description

Datasheet Details

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