SVSP7N70FJDD2 Datasheet - Silan Microelectronics

SVSP7N70FJDD2 700V DP MOS POWER TRANSISTOR

2 SVSP7N70F(D)(S)(FJD)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior therma.

SVSP7N70FJDD2 Features

* 7A, 700V, RDS(on)(typ.)=0.52@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Periodic avalanche rated

* Extreme dv/dt rated

* High peak current capability NOMENCLATURE 1 3 1.Gate 2.Drain 3.Source 1 3 TO-252-2L 1 2 3 TO-220FJD-3L 1 3 TO-263

SVSP7N70FJDD2 Datasheet (398.90 KB)