SVSP7N60FJDD2

600V SUPER JUNCTION MOS POWER TRANSISTOR

Silan Microelectronics

SVSP7N60FJDD2 Features

* 1 3 1.Gate 2.Drain 3.Source 12 3 TO-220F-3L

* 7A,600V, RDS(on)(typ.)=0.48@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Enhanced avalanche capability

* Extreme dv/dt rated

* High peak current capability 123 TO-220FJD-3L 13 TO-252-2L ORDER

SVSP7N60FJDD2 General Description

2 SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superi.

SVSP7N60FJDD2 Datasheet (347.69 KB)

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Datasheet Details

Part number:

SVSP7N60FJDD2

Manufacturer:

Silan Microelectronics

File Size:

347.69 KB

Description:

600v super junction mos power transistor.

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SVSP7N60FJDD2 600V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics

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SVSP7N60FJDD2 Features

SVSP7N60FJDD2 General Description

Datasheet Details

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