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SGTP50V65SDB1P7 650V FIELD STOP IGBT

SGTP50V65SDB1P7 Description

Silan Microelectronics SGTP50V65SDB1P7_Datasheet 50A, 650V FIELD STOP IGBT .
The SGTP50V65SDB1P7 field stop IGBT adopts Silan Field Stop V technology, features low conduction loss and switching loss.

SGTP50V65SDB1P7 Features

* low conduction loss and switching loss. This device is applicable to photovoltaic, UPS, SMPS, and PFC fields. FEATURES
* 50A, 650V, VCE(sat)(typ. )=1.45V@IC=50A
* Low conduction loss
* Ultra-fast switching
* High input impedance
* TJmax=175C C 2 1 G 3 E 123 TO-247-3L NOMENCLATU

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650V FIELD STOP IGBT Silan Semiconductors
Silan Semiconductors SGTP50V65SDB1P7-like datasheet