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ST2318SRG Datasheet - Stanson Technology

ST2318SRG N-Channel Enhancement Mode MOSFET

ST2318SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cel.

ST2318SRG-StansonTechnology.pdf

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Datasheet Details

Part number:

ST2318SRG

Manufacturer:

Stanson Technology

File Size:

207.79 KB

Description:

N-channel enhancement mode mosfet.

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ST2318SRG ST2318SRG N-Channel Enhancement Mode MOSFET Stanson Technology

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