ST2317S23RG P-Channel Enhancement Mode MOSFET

Stanson Technology

Description

ST2317S23RG P Channel Enhancement Mode MOSFET -5.0A .
ST2317S23RG is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.

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Datasheet Specifications

Part number: ST2317S23RG
Manufacturer: Stanson Technology
File Size: 869.76 KB
Datasheet: ST2317S23RG-StansonTechnology.pdf
Description: P-Channel Enhancement Mode MOSFET

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ST2317S23RG P-Channel Enhancement Mode MOSFET Stanson Technology

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