Datasheet4U Logo Datasheet4U.com

ST2317S23RG Datasheet - Stanson Technology

ST2317S23RG P-Channel Enhancement Mode MOSFET

ST2317S23RG is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as c.

ST2317S23RG-StansonTechnology.pdf

Preview of ST2317S23RG PDF
ST2317S23RG Datasheet Preview Page 2 ST2317S23RG Datasheet Preview Page 3

Datasheet Details

Part number:

ST2317S23RG

Manufacturer:

Stanson Technology

File Size:

869.76 KB

Description:

P-channel enhancement mode mosfet.

📁 Related Datasheet

ST2317DFX HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR (ST Microelectronics)

ST2310 Self Drive Piezo Transducer (SOUND COMPONENTS)

ST2310DHI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR (ST Microelectronics)

ST2310FX HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR (ST Microelectronics)

ST2310HI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR (ST Microelectronics)

ST2318SRG N-Channel Enhancement Mode MOSFET (Stanson Technology)

ST2319SRG P-Channel Enhancement Mode MOSFET (Stanson Technology)

ST2300 N-Channel Enhancement Mode MOSFET (Stanson Technology)

TAGS

ST2317S23RG ST2317S23RG P-Channel Enhancement Mode MOSFET Stanson Technology

ST2317S23RG Distributor