TSM13ND50CI

N-Channel Power MOSFET

Taiwan Semiconductor

* KEY PERFORMANCE PARAMETERS

* 100% UIS and Rg tested

* Advanced planar process

* Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC

* Halogen-free according to IEC 61249-2-21 PARAMETER VDS RDS(on) (max) Qg VALUE 500 0.48 39 UNIT V Ω nC APPLICATIONS

TSM13ND50CI

Taiwan Semiconductor

278.53 KB

N-channel power mosfet.

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TSM13ND50CI N-Channel Power MOSFET Taiwan Semiconductor

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