TSM13N50 - 500V N-Channel Power MOSFET

Taiwan Semiconductor Company

Datasheet Details

The TSM13N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

Low RDS(ON) 0.48Ω (Max. ) Low gate charge typical @ 36nC (Typ. ) Low Crss typical @ 23pF (Typ. ) Fast Switching Block Diagram Ordering Information Part No. TSM13N50CZ C0 TSM13N50CI C0 Package TO-220 ITO-220 Packing 50pcs / Tube 50pcs / Tube N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current.
Avalanche Current (Single) (Note 2) Single Pulse Avala.

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