TSM13N50 Datasheet (Taiwan Semiconductor Company)

TSM13N50, 500V N-Channel Power MOSFET

The TSM13N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

The

TSM13N50 Features

* Low RDS(ON) 0.48Ω (Max.) Low gate charge typical @ 36nC (Typ.) Low Crss typical @ 23pF (Typ.) Fast Switching Block Diagram Ordering Information Part No. TSM13N50CZ C0 TSM13N50CI C0 Package TO-220 ITO-220 Packing 50pcs / Tube 50pcs / Tube N-Channel MOSFET Absolute Maximum