TSM1N45 Datasheet - Taiwan Semiconductor Company

TSM1N45 450V N-Channel Power MOSFET

The TSM1N45 is N-Channel enhancement mode power field effect transistors are produced using planar DMOS technology process. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand higher energy pulse in the avalanch.

TSM1N45 Features

* Low gate charge @ typical 6.5nC Low Crss @ typical 6.5pF Avalanche energy specified Improved dv/dt capability Gate-Source Voltage ±30V guaranteed Block Diagram Ordering Information Part No. TSM1N45CT B0 TSM1N45CT A3 Package TO-92 TO-92 Packing 1Kpcs / Bulk 2Kpcs / A

TSM1N45 Datasheet (603.55 KB)