TSM1N45 Datasheet, Mosfet, Taiwan Semiconductor Company

TSM1N45 Features

• Mosfet
• Low gate charge @ typical 6.5nC Low Crss @ typical 6.5pF Avalanche energy specified Improved dv/dt capability Gate-Source Voltage ±30V

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TSM1N45

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Taiwan Semiconductor Company

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📄 Datasheet

Description:

450v n-channel power mosfet. The TSM1N45 is N-Channel enhancement mode power field effect transistors are produced using planar DMOS technology process. This adva

TSM1N45 Application

• Applications Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for an

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TSM1N45

Taiwan Semiconductor Company

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