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TSM1N60 Datasheet - Taiwan Semiconductor

TSM1N60_TaiwanSemiconductor.pdf

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Datasheet Details

Part number:

TSM1N60

Manufacturer:

Taiwan Semiconductor

File Size:

205.94 KB

Description:

N-channel power enhancement mode mosfet.

TSM1N60, N-Channel Power Enhancement Mode MOSFET

The TSM1N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.

In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes.

The new energy efficient design also offers a drain-

TSM1N60 Features

* — Robust high voltage termination Avalanche energy specified Diode is characterized for use in bridge circuits — Source to Drain diode recovery time comparable to a discrete fast recovery diode. IDSS and VDS(on) specified at elevated temperature — — — Block Diagram Ordering Information Part No.

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