TSM1N60 Datasheet - Taiwan Semiconductor

TSM1N60 N-Channel Power Enhancement Mode MOSFET

The TSM1N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain- .

TSM1N60 Features

* Robust high voltage termination Avalanche energy specified Diode is characterized for use in bridge circuits Source to Drain diode recovery time comparable to a discrete fast recovery diode. IDSS and VDS(on) specified at elevated temperature Block Diagram Ordering Information Part No.

TSM1N60 Datasheet (205.94 KB)