Datasheet Details
Part number:
TSM1N60
Manufacturer:
Taiwan Semiconductor
File Size:
205.94 KB
Description:
N-channel power enhancement mode mosfet.
TSM1N60_TaiwanSemiconductor.pdf
Datasheet Details
Part number:
TSM1N60
Manufacturer:
Taiwan Semiconductor
File Size:
205.94 KB
Description:
N-channel power enhancement mode mosfet.
TSM1N60, N-Channel Power Enhancement Mode MOSFET
The TSM1N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.
In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes.
The new energy efficient design also offers a drain-
TSM1N60 Features
* Robust high voltage termination Avalanche energy specified Diode is characterized for use in bridge circuits Source to Drain diode recovery time comparable to a discrete fast recovery diode. IDSS and VDS(on) specified at elevated temperature Block Diagram Ordering Information Part No.
📁 Related Datasheet
📌 All Tags