TSM1N60 Datasheet - Taiwan Semiconductor

N-Channel Power Enhancement Mode MOSFET

TSM1N60 Features

* Robust high voltage termination Avalanche energy specified Diode is characterized for use in bridge circuits Source to Drain diode recovery time comparable to a discrete fast recovery diode. IDSS and VDS(on) specified at elevated temperature Block Diagram Ordering Information Part No.

TSM1N60 General Description

The TSM1N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain- .

TSM1N60 Datasheet (205.94 KB)

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TSM1N60

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Taiwan Semiconductor

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205.94 KB

Description:

N-channel power enhancement mode mosfet.
www.DataSheet4U.com TSM1N60 N-Channel Power Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Drain 3. Source VDS = 600V ID = 1A RDS (on), Vgs @ 10.

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TSM1N60 Features

TSM1N60 General Description

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