TSM1N60 Datasheet, Mosfet, Taiwan Semiconductor

✔ TSM1N60 Features

Robust high voltage termination Avalanche energy specified Diode is characterized for use in bridge circuits Source to Drain diode recovery time comparable to a discr

✔ TSM1N60 Application

in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge

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Part number:

TSM1N60

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Taiwan Semiconductor

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📄 Datasheet

Description:

N-channel power enhancement mode mosfet. The TSM1N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over

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TSM1N60 N-Channel Power Enhancement Mode MOSFET Taiwan Semiconductor