TSM1N45D Datasheet (Taiwan Semiconductor Company)

TSM1N45D, 450V N-Channel Power MOSFET

The TSM1N45 is N-Channel enhancement mode power field effect transistors are produced using planar DMOS technology process.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand higher energy pulse in the avalanch

TSM1N45D Features

* Low gate charge @ typical 6.5nC Low Crss @ typical 6.5pF Avalanche energy specified Improved dv/dt capability Gate-Source Voltage ±50V guaranteed Block Diagram Ordering Information Part No. TSM1N45DCS RL Package SOP-8 Packing 2.5Kpcs / 13” Reel Dual N-Channel MOSFET