TSM1N45D Datasheet - Taiwan Semiconductor Company

TSM1N45D 450V N-Channel Power MOSFET

The TSM1N45 is N-Channel enhancement mode power field effect transistors are produced using planar DMOS technology process. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand higher energy pulse in the avalanch.

TSM1N45D Features

* Low gate charge @ typical 6.5nC Low Crss @ typical 6.5pF Avalanche energy specified Improved dv/dt capability Gate-Source Voltage ±50V guaranteed Block Diagram Ordering Information Part No. TSM1N45DCS RL Package SOP-8 Packing 2.5Kpcs / 13” Reel Dual N-Channel MOSFET

TSM1N45D Datasheet (554.22 KB)