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TSM1N80

N-Channel Power MOSFET

TSM1N80 Features

* Advanced planar process

* 100% avalanche tested

* Fast switching APPLICATION

* Power Supply

* Lighting KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS RDS(on) (max) Qg 800 21.6 5 V Ω nC SOT-223 Notes: Moisture sensitivity level: level 3. Per J-STD-020 ABSOLUTE MAX

TSM1N80 Datasheet (213.16 KB)

Preview of TSM1N80 PDF

Datasheet Details

Part number:

TSM1N80

Manufacturer:

Taiwan Semiconductor

File Size:

213.16 KB

Description:

N-channel power mosfet.

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TAGS

TSM1N80 N-Channel Power MOSFET Taiwan Semiconductor

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