Datasheet4U Logo Datasheet4U.com

TSM1N60S Datasheet - Taiwan Semiconductor

TSM1N60S 600V N-Channel Power MOSFET

The TSM1N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain.

TSM1N60S Features

* Robust high voltage termination

* Avalanche energy specified

* Diode is characterized for use in bridge circuits

* Source to Drain d

TSM1N60S Datasheet (365.45 KB)

Preview of TSM1N60S PDF
TSM1N60S Datasheet Preview Page 2 TSM1N60S Datasheet Preview Page 3

Datasheet Details

Part number:

TSM1N60S

Manufacturer:

Taiwan Semiconductor

File Size:

365.45 KB

Description:

600v n-channel power mosfet.

📁 Related Datasheet

TSM1N60 N-Channel Power Enhancement Mode MOSFET (Taiwan Semiconductor)

TSM1N60L 600V N-Channel Power MOSFET (Taiwan Semiconductor)

TSM1N45 450V N-Channel Power MOSFET (Taiwan Semiconductor Company)

TSM1N45D 450V N-Channel Power MOSFET (Taiwan Semiconductor Company)

TSM1N50 500V N-Channel Power MOSFET (Taiwan Semiconductor)

TSM1N80 N-Channel Power MOSFET (Taiwan Semiconductor)

TSM1NB60 N-Channel Power MOSFET (Taiwan Semiconductor)

TSM1NB60CP N-Channel Power MOSFET (Taiwan Semiconductor)

TAGS

TSM1N60S 600V N-Channel Power MOSFET Taiwan Semiconductor

TSM1N60S Distributor