TSM1N60S

600V N-Channel Power MOSFET

Taiwan Semiconductor

TSM1N60S Features

* Robust high voltage termination

* Avalanche energy specified

* Diode is characterized for use in bridge circuits

* Source to Drain d

TSM1N60S General Description

The TSM1N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain.

TSM1N60S Datasheet (365.45 KB)

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Datasheet Details

Part number:

TSM1N60S

Manufacturer:

Taiwan Semiconductor

File Size:

365.45 KB

Description:

600v n-channel power mosfet.
TO-92 Pin Definition: 1. Gate 2. Drain 3. Source TSM1N60S 600V N-Channel Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(Ω) 600 11 @ VGS =10V ID (.

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TSM1N60S 600V N-Channel Power MOSFET Taiwan Semiconductor

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TSM1N60S Features

TSM1N60S General Description

Datasheet Details

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