TSM1NB60 - N-Channel Power MOSFET

Taiwan Semiconductor

Datasheet Details

The TSM1NB60 N-Channel Power MOSFET is produced by new advance planar process.

Low RDS(ON) 8Ω (Typ. ) Low gate charge typical @ 6.1nC (Typ. ) Low Crss typical @ 4.2pF (Typ. ) Block Diagram Ordering Information Part No. TSM1NB60CH C5G TSM1NB60CP ROG Package TO-251 TO-252 Packing 75pcs / Tube 2.5Kpcs / 13” Reel 2.5Kpcs / 13” Reel N-Channel MOSFET TSM1NB60CW RPG SOT-223 Note: “G” denotes for Halogen Free Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Curre.

📁 Related Datasheet

TSM1N45 - 450V N-Channel Power MOSFET (Taiwan Semiconductor Company)
TSM1N45D - 450V N-Channel Power MOSFET (Taiwan Semiconductor Company)
TSM100 - SINGLE OPERATIONAL AMPLIFIER AND SINGLE COMPARATOR (STMicroelectronics)
TSM100-33 - Surface Mount Devices (SPSEMI)
TSM100I - SINGLE OPERATIONAL AMPLIFIER AND SINGLE COMPARATOR (STMicroelectronics)
TSM101 - VOLTAGE AND CURRENT CONTROLLER (STMicroelectronics)
TSM1011 - Constant Voltage and Constant Current Controller for Battery Chargers and Adapters (STMicroelectronics)
TSM1012 - Low consumption voltage and current controller (STMicroelectronics)

📌 All Tags

Taiwan Semiconductor TSM1NB60-like datasheet

TSM1NB60 Stock/Price