TSM1NB60S - 600V N-Channel Power MOSFET

Taiwan Semiconductor

Datasheet Details

The TSM1NB60S N-Channel Power MOSFET is produced by new advance planar process.

Low RDS(ON) 8Ω (Typ. ) Low gate charge typical @ 6.1nC (Typ. ) Low Crss typical @ 4.2pF (Typ. ) Block Diagram Ordering Information Part No. TSM1NB60SCT B0 TSM1NB60SCT B0G TSM1NB60SCT A3 Package TO-92 TO-92 TO-92 Packing 1Kpcs / Bulk 1Kpcs / Bulk 2Kpcs / Ammo 2Kpcs / Ammo N-Channel MOSFET TSM1NB60SCT A3G TO-92 Note: “G” denotes for Halogen Free Absolute Maximum Rating (TA=25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current.

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