TSM1NB60S Datasheet, Mosfet, Taiwan Semiconductor

TSM1NB60S Features

• Mosfet
• Low RDS(ON) 8Ω (Typ.) Low gate charge typical @ 6.1nC (Typ.) Low Crss typical @ 4.2pF (Typ.) Block Diagram Ordering Information Part No. TSM1NB60SCT B0 T

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TSM1NB60S

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Taiwan Semiconductor

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📄 Datasheet

Description:

600v n-channel power mosfet. The TSM1NB60S N-Channel Power MOSFET is produced by new advance planar process. This advanced technology has been especially tailored

TSM1NB60S Application

• Applications Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for an

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TSM1NB60S

Taiwan Semiconductor

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