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TSM1N60L Datasheet - Taiwan Semiconductor

TSM1N60L 600V N-Channel Power MOSFET

The TSM1N60L is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain.

TSM1N60L Features

* Robust high voltage termination

* Avalanche energy specified

* Diode is characterized for use in bridge circuits

* Source to

TSM1N60L Datasheet (399.36 KB)

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Datasheet Details

Part number:

TSM1N60L

Manufacturer:

Taiwan Semiconductor

File Size:

399.36 KB

Description:

600v n-channel power mosfet.

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TAGS

TSM1N60L 600V N-Channel Power MOSFET Taiwan Semiconductor

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