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TSM1N60L 600V N-Channel Power MOSFET

Taiwan Semiconductor

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Description

TSM1N60L 600V N-Channel Power MOSFET TO-252 TO-251 Pin Definition: 1.Gate 2.Drain 3.Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) 600 12 @ VGS =.
The TSM1N60L is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.

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Datasheet Specifications

Part number: TSM1N60L
Manufacturer: Taiwan Semiconductor
File Size: 399.36 KB
Datasheet: TSM1N60L_TaiwanSemiconductor.pdf
Description: 600V N-Channel Power MOSFET

Features

* Robust high voltage termination
* Avalanche energy specified
* Diode is characterized for use in bridge circuits
* Source to

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TSM1N60L 600V N-Channel Power MOSFET Taiwan Semiconductor

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