TSM1N60L

600V N-Channel Power MOSFET

Taiwan Semiconductor

TSM1N60L Features

* Robust high voltage termination

* Avalanche energy specified

* Diode is characterized for use in bridge circuits

* Source to

TSM1N60L General Description

The TSM1N60L is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain.

TSM1N60L Datasheet (399.36 KB)

TSM1N60L Datasheet Preview — Preview of TSM1N60L PDF

Datasheet Details

Part number:

TSM1N60L

Manufacturer:

Taiwan Semiconductor

File Size:

399.36 KB

Description:

600v n-channel power mosfet.
TSM1N60L 600V N-Channel Power MOSFET TO-252 TO-251 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) 600 12 @ VGS =.

📁 Related Datasheet

TSM1N60 N-Channel Power Enhancement Mode MOSFET (Taiwan Semiconductor)

TSM1N60S 600V N-Channel Power MOSFET (Taiwan Semiconductor)

TSM1N45 450V N-Channel Power MOSFET (Taiwan Semiconductor Company)

TSM1N45D 450V N-Channel Power MOSFET (Taiwan Semiconductor Company)

TSM1N50 500V N-Channel Power MOSFET (Taiwan Semiconductor)

TSM1N80 N-Channel Power MOSFET (Taiwan Semiconductor)

TSM1NB60 N-Channel Power MOSFET (Taiwan Semiconductor)

TSM1NB60CP N-Channel Power MOSFET (Taiwan Semiconductor)

TSM1NB60LCW N-Channel Power MOSFET (Taiwan Semiconductor)

TSM1NB60S 600V N-Channel Power MOSFET (Taiwan Semiconductor)

TAGS

TSM1N60L 600V N-Channel Power MOSFET Taiwan Semiconductor

Image Gallery

TSM1N60L Features

TSM1N60L General Description

Datasheet Details

File Size:

Description:

TSM1N60L Distributor