TSM1NB60CP N-Channel Power MOSFET

Taiwan Semiconductor

Description

TSM1NB60CP Taiwan Semiconductor N-Channel Power MOSFET 600V, 1.2A, 10Ω .

📥 Download Datasheet

TSM1NB60CP Datasheet Preview — Preview of TSM1NB60CP PDF

Datasheet Specifications

Part number: TSM1NB60CP
Manufacturer: Taiwan Semiconductor
File Size: 364.12 KB
Datasheet: TSM1NB60CP-TaiwanSemiconductor.pdf
Description: N-Channel Power MOSFET

Features

* Low RDS(ON) 9.4Ω (Typ. )
* Low gate charge typical @ 7.7nC (Typ. )
* Low Crss typical @ 8pF (Typ. )
* RoHS Compliant

Applications

* Power Supply
* Lighting
* Charger TO-252 (DPAK) Note: MSL 3 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current TC =

TSM1NB60CP Distributors

📁 Related Datasheet

TSM1N45 TSM1N45D TSM100 TSM100-33 TSM100I TSM101

📌 All Tags

TSM1NB60CP N-Channel Power MOSFET Taiwan Semiconductor

Taiwan Semiconductor TSM1NB60CP-like datasheet