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1SS337 - Silicon Epitaxial Planar Type Diode

1SS337 Description

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS337 Ultra High-Speed Switching Applications 1SS337 Unit: mm z Small package: SC-59 z Low forward volt.

1SS337 Applications

* 1SS337 Unit: mm z Small package: SC-59 z Low forward voltage: VF (3) = 0.88 V (typ. ) z Fast reverse recovery time: trr = 6 ns (typ. ) z Small total capacitance: CT = 1.6 pF (typ. ) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Maximum (peak) reverse voltage VRM 85

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Silicon Epitaxial Planar Type Diode Toshiba Semiconductor
Toshiba Semiconductor 1SS337-like datasheet

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