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1SS337 Datasheet - Toshiba Semiconductor

1SS337 Silicon Epitaxial Planar Type Diode

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS337 Ultra High-Speed Switching Applications 1SS337 Unit: mm z Small package: SC-59 z Low forward voltage: VF (3) = 0.88 V (typ.) z Fast reverse recovery time: trr = 6 ns (typ.) z Small total capacitance: CT = 1.6 pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 600 mA Average forward current I.

1SS337 Datasheet (284.91 KB)

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Datasheet Details

Part number:

1SS337

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

284.91 KB

Description:

Silicon epitaxial planar type diode.

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1SS337 Silicon Epitaxial Planar Type Diode Toshiba Semiconductor

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