2SA1296 - Silicon PNP Epitaxial Type Transistor

Toshiba Semiconductor

Datasheet Details

Part number	2SA1296
Manufacturer	Toshiba Semiconductor
File Size	200.86 KB
Description	Silicon PNP Epitaxial Type Transistor
Datasheet	2SA1296 Datasheet
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1296 Power Amplifier Applications Power Switching Applications 2SA1296 Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) @IC = −2 A • Complementary to 2SC3266. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −20 V Collector-emitter voltage VCEO −20 V Emitter-base voltage VEBO −6 V Collector current IC −2 A Base current IB −0.5 A Collector power dissipation Junction temperature Storage temperature range PC 750 mW Tj 150 °C Tstg −55~150 °C JEDEC JEITA TO-92 SC-43 Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-5F1B temperature/current/voltage and the significant change in temperature, etc.

Published: Mar 22, 2005 |