2SA1297 - Silicon PNP Epitaxial Type Transistor

Toshiba Semiconductor

Datasheet Details

Part number	2SA1297
Manufacturer	Toshiba Semiconductor
File Size	210.96 KB
Description	Silicon PNP Epitaxial Type Transistor
Datasheet	2SA1297 Datasheet
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1297 Power Amplifier Applications Power Switching Applications 2SA1297 Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) @IC = −2 A • Complementary to 2SC3267. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −20 V Collector-emitter voltage VCEO −20 V Emitter-base voltage VEBO −6 V Collector current IC −2 A Base current IB −0.5 A Collector power dissipation Junction temperature Storage temperature range PC 400 mW Tj 150 °C Tstg −55 to 150 °C MINI JEDEC ― Note: Using continuously under heavy loads (e.g. the application of high JEITA ― temperature/current/voltage and the significant change in TOSHIBA 2-4E1A temperature, etc.

Published: Mar 22, 2005 |