2SA1955 Datasheet - Toshiba Semiconductor

2SA1955 Silicon PNP Epitaxial Type Transistor

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1955 General Purpose Amplifier Applications Switching and Muting Switch Application 2SA1955 Unit: mm Low saturation voltage: VCE (sat) (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA Large collector current: IC = 400 mA (max) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dis.

2SA1955_ToshibaSemiconductor.pdf