2SA1955FV Datasheet - Toshiba

2SA1955FV Silicon PNP Transistor

2SA1955FV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1955FV General Purpose Amplifier Applications Switching and Muting Switch Application Low saturation voltage: VCE (sat) (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA Large collector current: IC = 400 mA (max) Absolute Maximum Ratings (Ta = 25°C) 1.2±0.05 0.8±0.05 0.4 0.4 0.22±0.05 Unit: mm 1.2±0.05 0.8±0.05 1 23 0.32±0.05 Characteristics Symbol Rating Unit 0.13±.

2SA1955FV Datasheet (231.53 KB)