2SA1931 Datasheet - Toshiba

2SA1931 Silicon PNP Transistor

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT PROCESS) 2SA1931 High-Current Switching Applications 2SA1931 Unit: mm Low saturation voltage: VCE (sat) = 0.4 V (max) High-speed switching time: tstg = 1.0 µs (typ.) Complementary to 2SC4881 Maximum Ratings (Tc = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temper.

2SA1931 Datasheet (231.41 KB)