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2SA1931 - Silicon PNP Transistor

2SA1931 Description

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT PROCESS) 2SA1931 High-Current Switching Applications 2SA1931 Unit: mm * Low saturation vo.

2SA1931 Applications

* 2SA1931 Unit: mm
* Low saturation voltage: VCE (sat) =
* 0.4 V (max)
* High-speed switching time: tstg = 1.0 µs (typ. )
* Complementary to 2SC4881 Maximum Ratings (Tc = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Co

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Silicon PNP Transistor Toshiba
Toshiba 2SA1931-like datasheet