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GT40T101 Silicon N-Channel MOSFET

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Description

GT40T101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT40T101 HIGH POWER SWITCHING APPLICATIONS Unit: mm l Enhancement .

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Applications

* Unit: mm l Enhancement
* Mode l High Speed l Low Saturation : tf = 0.4 µs (Max. ) (IC = 40 A) : VCE (sat) = 5.0 V (Max. ) (IC = 40 A) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector
* Emitter Voltage Gate
* Emitter Voltage Collector Current Collector Power Dissipation (Tc

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