Datasheet4U Logo Datasheet4U.com

GT40T101 Datasheet - Toshiba Semiconductor

GT40T101 Silicon N-Channel MOSFET

GT40T101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT40T101 HIGH POWER SWITCHING APPLICATIONS Unit: mm l Enhancement Mode l High Speed l Low Saturation : tf = 0.4 µs (Max.) (IC = 40 A) : VCE (sat) = 5.0 V (Max.) (IC = 40 A) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector Emitter Voltage Gate Emitter Voltage Collector Current Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Range DC 1ms SYMBOL VCES VG.

GT40T101 Datasheet (225.32 KB)

Preview of GT40T101 PDF

Datasheet Details

Part number:

GT40T101

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

225.32 KB

Description:

Silicon n-channel mosfet.

📁 Related Datasheet

GT40T301 Silicon N-Channel IGBT (Toshiba Semiconductor)

GT40T302 Silicon N-Channel IGBT (Toshiba Semiconductor)

GT400P10 P-Channel Enhancement Mode Power MOSFET (GOFORD)

GT400P10T P-Channel Enhancement Mode Power MOSFET (GOFORD)

GT4050D Photovoltaic bypass module diode (GREATEEN)

GT40G121 Silicon N-Channel IGBT (Toshiba Semiconductor)

GT40J121 Silicon N-Channel IGBT (Toshiba)

GT40J321 Silicon N-Channel IGBT (Toshiba Semiconductor)

GT40J322 Silicon N-Channel IGBT (Toshiba Semiconductor)

GT40M101 SILICON N-CHANNEL IGBT (Toshiba Semiconductor)

TAGS

GT40T101 Silicon N-Channel MOSFET Toshiba Semiconductor

Image Gallery

GT40T101 Datasheet Preview Page 2 GT40T101 Datasheet Preview Page 3

GT40T101 Distributor