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GT40T302 Datasheet - Toshiba Semiconductor

GT40T302 Silicon N-Channel IGBT

GT40T302 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T302 Parallel Resonance Inverter Switching Applications Unit: mm FRD included between emitter and collector Enhancement mode High speed IGBT: tf = 0.23 μs (typ.) (IC = 40 A) FRD: trr = 0.7 μs (typ.) (di/dt = 20 A/μs) Low saturation voltage: VCE (sat) = 3.7 V (typ.) (IC = 40 A) Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter v.

GT40T302_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

GT40T302

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

185.19 KB

Description:

Silicon n-channel igbt.

GT40T302 Distributor

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GT40T302 GT40T302 Silicon N-Channel IGBT Toshiba Semiconductor