Part number:
GT40T302
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
185.19 KB
Description:
Silicon n-channel igbt.
GT40T302_ToshibaSemiconductor.pdf
Datasheet Details
GT40T302_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
GT40T302
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
185.19 KB
Description:
Silicon n-channel igbt.
GT40T302, Silicon N-Channel IGBT
GT40T302 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T302 Parallel Resonance Inverter Switching Applications Unit: mm FRD included between emitter and collector Enhancement mode High speed IGBT: tf = 0.23 μs (typ.) (IC = 40 A) FRD: trr = 0.7 μs (typ.) (di/dt = 20 A/μs) Low saturation voltage: VCE (sat) = 3.7 V (typ.) (IC = 40 A) Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter v
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