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GT40T302 Silicon N-Channel IGBT

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Description

GT40T302 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T302 Parallel Resonance Inverter Switching Applications Unit: mm

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Applications

* Unit: mm
* FRD included between emitter and collector Enhancement mode High speed IGBT: tf = 0.23 μs (typ. ) (IC = 40 A) FRD: trr = 0.7 μs (typ. ) (di/dt =
* 20 A/μs) Low saturation voltage: VCE (sat) = 3.7 V (typ. ) (IC = 40 A) Absolute Maximum Ratings (Ta

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GT40T302 Silicon N-Channel IGBT Toshiba Semiconductor
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