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GT40T301 Datasheet - Toshiba Semiconductor

GT40T301 Silicon N-Channel IGBT

GT40T301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T301 Parallel Resonance Inverter Switching Applications Unit: mm FRD included between emitter and collector Enhancement-mode High speed IGBT : tf = 0.25 µs (typ.) (IC = 40 A) FRD : trr = 0.7 µs (typ.) (di/dt = 20 A/µs) Low saturation voltage: VCE (sat) = 3.7 V (typ.) (IC = 40 A) Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage .

GT40T301_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

GT40T301

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

311.22 KB

Description:

Silicon n-channel igbt.

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GT40T301 GT40T301 Silicon N-Channel IGBT Toshiba Semiconductor