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GT40T301 Silicon N-Channel IGBT

GT40T301 Description

GT40T301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T301 Parallel Resonance Inverter Switching Applications Unit: mm

GT40T301 Applications

* Unit: mm
* FRD included between emitter and collector Enhancement-mode High speed IGBT : tf = 0.25 µs (typ. ) (IC = 40 A) FRD : trr = 0.7 µs (typ. ) (di/dt =
* 20 A/µs) Low saturation voltage: VCE (sat) = 3.7 V (typ. ) (IC = 40 A) Maximum Ratings (Ta = 25°C

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Silicon N-Channel IGBT Toshiba Semiconductor
Toshiba Semiconductor GT40T301-like datasheet