Part number:
GT40T301
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
311.22 KB
Description:
Silicon n-channel igbt.
GT40T301_ToshibaSemiconductor.pdf
Datasheet Details
GT40T301_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
GT40T301
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
311.22 KB
Description:
Silicon n-channel igbt.
GT40T301, Silicon N-Channel IGBT
GT40T301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T301 Parallel Resonance Inverter Switching Applications Unit: mm FRD included between emitter and collector Enhancement-mode High speed IGBT : tf = 0.25 µs (typ.) (IC = 40 A) FRD : trr = 0.7 µs (typ.) (di/dt = 20 A/µs) Low saturation voltage: VCE (sat) = 3.7 V (typ.) (IC = 40 A) Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage
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